unisonic technologies co., ltd 2sa1020 pnp silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2011 unisonic technologies co., ltd qw-r211-007,d silicon pnp epitaxial transistor ? description the utc 2sa1020 is designed for power amplifier and power switching applications. ? features *low collector satu ration voltage: v ce(sat) =-0.5v (max) (i c =-1a) *high speed switching time: t stg =1.0 s(typ) *complement to utc 2sc2655 ? ordering information ordering number pin assignment normal lead free halogen free package 1 2 3 packing 2SA1020-X-AE3-R 2sa1020l-x-ae3-r 2sa1020g-x-ae3-r sot-23 e b c tape reel 2sa1020-x-ab3-r 2sa1020l-x-ab3-r 2sa1020g-x-ab3-r sot-89 b c e tape reel 2sa1020-x-t9n-b 2sa1020l-x-t9n-b 2sa1020g-x-t9n-b to-92nl e c b tape box 2sa1020-x-t9n-k 2sa1020l-x-t9n-k 2sa1020g-x-t9n-k to-92nl e c b bulk
2sa1020 pnp silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r211-007,d ? absolute maximum ratings (ta=25 c, unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v collector current ic -2 a to-92nl 900 mw sot-23 300 mw collector power dissipation sot-89 p c 500 mw junction temperature t j 150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (ta=25 c, unless otherwise specified) parameter symbol test conditions min typ max unit collector to emitter breakdown voltage bv ceo ic=-10ma, i b =0 -50 v collector cut-off current i cbo v cb =-50v, i e =0 -1.0 a emitter cut-off current i ebo v eb =-5v, i c =0 -1.0 a dc current gain h fe1 h fe2 v ce =-2v, i c =-0.5a v ce =-2v, i c =-1.5a 70 40 240 collector to emitter saturation voltage v ce(sat) ic=-1a, i b =-0.05a -0.5 v base to emitter saturation voltage v be(sat) ic=-1a, i b =-0.05a -1.2 v transition frequency f t v ce =-2v, ic=-0.5a 100 mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz 40 pf turn-on time t on 0.1 s storage time t stg 1.0 s switching time fall time t f 0.1 s ? classification of h fe1 rank o y range 70 - 140 120 - 240
2sa1020 pnp silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r211-007,d ? typical characteristics
2sa1020 pnp silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r211-007,d ? typical characteristics(cont.) to-92nl sot-89 sot-23 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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